2SK1273 NA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
2A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.24Ω/Ohm @500mA.10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1-2.5V |
| 耗散功率Pd
Power Dissipation |
2W |
| Description & Applications |
N-Channel MOS FET FOR HIGH SPEED SWITCHING Directly driven by ICs having a 5V power source Has low on-state resisitance Not necessary to consider driving current because of its high input impedance Possible to reduce the number of parts by omitting the bias resistor |
| 描述与应用 |
N沟道MOS FET用于高速开关 直接带动有5V电源IC 具有低导通状态创制 不必考虑驱动电流，因为它的高输入阻抗 能够减少部件的数量通过省略偏置电阻 |
| 技术文档PDF下载 |
在线阅读  |
