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2SJ632-TD GA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
-2A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.275Ω @-10A,-10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1.2--2.6V |
| 耗散功率Pd
Power Dissipation |
1.5W |
| Description & Applications |
Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. |
| 描述与应用 |
·低导通电阻。 ·超高速开关。 ·4V驱动器 |
| 技术文档PDF下载 |
在线阅读  |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| 2SJ632 |
GA |
SANYO |
12+ROHS |
SOT-89/SC-62/PCP |
200 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| 2SJ632-TD |
GA |
SANYO |
12+ROHS |
SOT-89/SC-62/PCP |
8000 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| 2SJ633-TL |
J633 |
SANYO |
05+NOPB1500 |
TO-252/DPAK/TP-FA |
56700 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| 2SJ633-TL |
J633 |
SANYO |
05+ |
TO-252/DPAK/TP-FA |
13300 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| 2SJ634 |
J634 |
SANYO |
05+NOPB2100 |
TO-252/DPAK/TP-FA |
4700 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| 2SJ637-TL-E |
J637 |
SANYO |
05NOPB |
TO-252/DPAK/TP-FA |
13300 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| 2SJ637-TL-E |
J637 |
SANYO |
05NOPB |
TO-252/DPAK/TP-FA |
21000 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| 2SJ634 |
J634 |
SANYO |
05+ROHS |
TO-252 |
0 |
场效应管FET-其它Other |
查看 |
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