2SJ067200L 5M 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
7V |
| 最大漏极电流Id
Drain Current |
-100mA/-0.1A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
15Ω @-10mA,-4V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.5--1.5 |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
Silicon P-channel MOSFET For switching circuits ■ Features ? Ultra small package switching MOSFETs ? SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. |
| 描述与应用 |
硅P沟道MOSFET 用于开关电路 ■特性 ?超小型封装开关MOSFET ?SSS迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |
| 技术文档PDF下载 |
在线阅读  |
