2SD968A-R VR 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
120V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
120V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
| 截止频率fT
Transtion Frequency(fT) |
120MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
90~220 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV/0.2V |
| 耗散功率Pc
Power Dissipation |
1W |
| Description & Applications |
Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A high collector to emitter voltage Vceo large collector power dissipation Pc |
| 描述与应用 |
NPN硅外延平面型 对于低频驱动放大 互补2SB7892SB789A 高集电极到发射极电压VCEO 大集电极功耗Pc |
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