2SD2199R-TSD-DR D2199 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
7A |
| 截止频率fT
Transtion Frequency(fT) |
10MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc
Power Dissipation |
1.65W |
| Description & Applications |
*PNP/NPN Epitaxial Planar Silicon Transistor *50V/7A switching applications *NPN Epitaxial planar silicon transistors *surface mount type device making the following possible *low collector to emitter saturation voltage *highly resistant to breakdown because of wide ASO |
| 描述与应用 |
*PNP/ NPN平面外延硅晶体管 *50V/7A开关应用 *以下可能的NPN外延平面硅晶体管 *表面贴装型器件 *集电极到发射极饱和电压低 *具有很高的耐击穿，因为宽ASO |
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