2SD2185-R 1HR 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
3A |
| 截止频率fT
Transtion Frequency(fT) |
110MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120~240 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
150mV/0.15V |
| 耗散功率Pc
Power Dissipation |
1W |
| Description & Applications |
*Silicon NPN epitaxial planer type *low-frequency output amplification *Complementary to 2SB1440 features *Low collector to emitter saturation voltage VCE(sat) *Mini Power type package, allowing downsizing of the equipment and automAtic insertion through the tape packing and the mAgazine packing |
| 描述与应用 |
*NPN硅外延平面型 *低频输出放大 *互补2SB1440 特点 *低集电极到发射极饱和电压VCE（SAT） *迷你功率型封装，让瘦身的设备 *通过自动插入带包装盒包装 |
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