2SC5820WU-TL WU 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
12V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
4V |
| 集电极连续输出电流IC
Collector Current(IC) |
35mA |
| 截止频率fT
Transtion Frequency(fT) |
20GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
100mW/0.1W |
| Description & Applications |
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator Application ? High gain bandwidth product fT = 20 GHz typ. ? High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz |
| 描述与应用 |
NPN硅外延 高频低噪声放大器/振荡器 应用 ?高增益带宽积 FT =20 GHz的典型。 ?高功率增益和低噪声系数; PG=17.5 dB，NF= 1.15 dB。在f =1.8 GHz的 |
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