2SC5812WG WG 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
4V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
11GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120~150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
80mW |
| Description & Applications |
Silicon NPN Epitaxial VHF/UHF wide band amplifier Application ? High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) |
| 描述与应用 |
NPN硅外延 VHF/ UHF宽频带放大器 应用 ?高功率增益，低噪声系数低功率操作： | S21|2 ?=17 dB，NF= 1.0 dB（VCE= 1 V，IC= 5毫安，F =900兆赫） |
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