2SC5616 FB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9.0V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 截止频率fT
Transtion Frequency(fT) |
5GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~145 |
| 管压降VCE(sat)
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
140mW/0.14W |
| Description & Applications |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES ? Low voltage operation, low phase distortion ? Ideal for OSC applications ? 3-pin lead-less minimold package (1005 PKG) |
| 描述与应用 |
NPN硅RF晶体管 高频低噪声 3引脚引线迷你型 特点 ?低电压工作,低相位失真 ?OSC申请非常适于 ?3引脚引线迷你型包装(1005封装) |
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