2SC5191 T88 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
9V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
6V |
集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
截止频率fT
Transtion Frequency(fT) |
4.5Ghz |
直流电流增益hFE
DC Current Gain(hFE) |
80~160 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
|
耗散功率Pc
Power Dissipation |
200mW/0.2W |
Description & Applications |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES ? Low Voltage Operation, Low Phase Distortion ? Low Noise NF = 1.5 dB . @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB . @VCE = 1 V, IC = 3 mA, f = 2 GHz ? Large Absolute Maximum Collector Current IC = 100 mA ? Mini Mold Package |
描述与应用 |
微波低噪声放大器 NPN硅外延晶体管 特点 ?低电压操作,低相位失真 ?低噪声 NF=1.5分贝。 @ VCE= 3 V,IC =7毫安,F =2吉赫 NF=1.7分贝。 @ VCE= 1 V,IC =3毫安,F =2吉赫 ?大绝对最大集电极电流 IC= 100 mA时 ?迷你模具包装 |
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