2SC3134 H6 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
NPN Silicon epitaxial Transistors For AF applications features High VEBO Wide ASO and high durability against breakdown Complementary to 2SA1252 |
| 描述与应用 |
NPN硅外延晶体管 对于AF应用 特点 高VEBO 宽的ASO和高耐久性反对击穿 互补型2SA1252 |
| 技术文档PDF下载 |
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