2SB792A 2F 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-185V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-185V |
| 集电极连续输出电流IC
Collector Current(IC) |
-50mA |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
130~330 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-1000mV/-1V |
| 耗散功率Pc
PoWer Dissipation |
200mW/0.2W |
| Description & Applications |
PNP/NPN epitaxial planar silicon transistorsSilicon PNP epitaxial planer type Features ·High collector to emitter voltage VCEO. ·Low noise voltage NV. ·Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 |
PNP/ NPN外延平面硅晶体管 特点 ·高集电极到发射极电压VCEO。 ·低噪声电压NV。 ·迷你型包装，让精简的设备和通过自动插入带包装盒包装 |
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