2SB779-R IAR 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?20V |
| 集电极连续输出电流IC
Collector Current(IC) |
?500mA/-0.5A |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
130~220 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?200mV/-0.2V |
| 耗散功率Pc
PoWer Dissipation |
200mW/0.2W |
| Description & Applications |
for high current drive application silicon PNP epitaxial type For low-frequency output amplification Features Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of hFE at the low collector voltage. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 |
为高电流驱动应用 硅PNP外延型 对于低频输出放大 特点 低集电极到发射极饱和电压VCE（SAT） 良好的线性在低集电极电压的hFE参数。 迷你型包装，包装盒包装的设备和通过自动插入 |
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