2SB1679 3V 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-10V |
| 集电极连续输出电流IC
Collector Current(IC) |
-1A |
| 截止频率fT
Transtion Frequency(fT) |
130MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
130~350 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-1.2V |
| 耗散功率Pc
PoWer Dissipation |
150mW/0.15W |
| Description & Applications |
PNP Silicon epitaxial planar transistor For low-frequency amplification Features ? Large current capacitance ? Low collector to emitter saturation voltage ? Small type package, allowing downsizing and thinning of the equipment |
| 描述与应用 |
PNP硅外延平面晶体管 对于低频放大 特点 ?大电流容量 ?低集电极到发射极饱和电压 ?小型封装，允许裁员和变薄的设备 |
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