2SC4655GBL KB 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA |
| 截止频率fT
Transtion Frequency(fT) |
230MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~250 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
125mW/0.125W |
| Description & Applications |
Features ?Silicon PNP epitaxial planer type ?For high-frequency amplification ?Optimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. ?SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 |
特点 ?PNP硅外延平面型高频放大 ?最佳射频放大，振荡，混合，中频的FM/ AM收音机。 ?SS-迷你型包装，让瘦身的设备通过自动插入磁带包装 |
| 技术文档PDF下载 |
在线阅读  |
