UN5116-R 6F.R 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
电阻比(R1/R2)
Resistance Ratio |
|
直流电流增益hFE
DC Current Gain(hFE) |
210~340 |
截止频率fT
Transtion Frequency(fT) |
80MHz |
耗散功率Pc
Power Dissipation |
0.15W/150mW |
Description & Applications |
Features ?Silicon PNP epitaxial planer transistor ?Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ?S-Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing |
描述与应用 |
特点 ?硅PNP外延刨刀晶体管的 ?成本可降低通过减员设备和减少部件的数量。 ?S-迷你型包装,使瘦身的设备和通过自动插入磁带包装盒包装 |
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